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The BC857BS,135 is a dual PNP bipolar junction transistor manufactured by Nexperia USA Inc. It utilizes silicon technology and is housed in a surface-mount TSSOP-6 (SC-88) package. The device features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 45 V. Additional electrical specifications include a collector-base voltage of 50 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 300 mW. The component exhibits a transition frequency of 175 MHz and a minimum DC current gain of 200 at 2 mA and 5 V. Operating temperatures range from -65 °C to +150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability records. Confirm RoHS compliance status directly with the supplier or manufacturer datasheet prior to finalizing orders.
Select this component when a matched dual PNP transistor is required in a small outline package. Compare the 100 mA current limit and 45 V voltage rating against circuit requirements. Evaluate the 300 mW power dissipation capability relative to thermal management constraints on the printed circuit board layout.
This part belongs to the Nexperia BC857 series of small-signal PNP transistors. The BC857BS variant specifically denotes the dual configuration packaged in the SC-88 form factor. This series serves as a standard solution for general-purpose analog and digital switching tasks across consumer and industrial electronics.
Potential substitutes include the BCM857DS,135 for similar dual PNP functionality in a 6-TSOP package. Verify pinout compatibility and electrical parameter alignment before implementation.