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The BC857BS_R1_00001 is a PNP general-purpose dual transistor manufactured by Panjit International Inc. It utilizes an epitaxial silicon planar design housed in a plastic SOT-363 case. The device features a collector-emitter breakdown voltage of -45 V and a maximum DC collector current of -100 mA. Thermal characteristics include a total power dissipation of 150 mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 833 °C/W. The unit weighs approximately 0.006 grams.
Verify the specific ordering suffix to confirm packaging orientation and reel size. The R1 designation indicates Tape and Reel packing on a 7-inch reel compliant with RoHS 2.0 standards. Confirm that the component lot number is available for tracking purposes if required for quality assurance or complaint resolution processes.
Select this component when a compact dual PNP solution is required for low-power signal processing. Ensure the operating environment remains within the specified -55°C to +150°C junction temperature range. Verify that the circuit requirements do not exceed the absolute maximum ratings for collector-base voltage or emitter-base voltage limits.
This part belongs to the BC857 series of PNP general-purpose transistors produced by Panjit. It serves as a complementary device to the NPN BC847 series. The BC857BS variant specifically denotes the dual-transistor configuration packaged in the SOT-363 form factor, distinguishing it from single-transistor versions like the BC857B.
Compatible substitutes include other SOT-363 dual PNP transistors such as the MMBT3946 or SS8550D, provided they meet the -45V voltage and -100mA current specifications. Verify pinout compatibility before implementation.
The device marking code is 57S.
The typical noise figure is 10 dB, measured at IC=0.2mA, VCE=5.0Vdc, RS=2.0kΩ, f=1.0kHz, and BW=200Hz.
It is packed in Tape and Reel format on a 7-inch plastic reel, indicated by the R1 packing code.