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The BC857BSQ-7-F is a dual PNP bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon epitaxial die construction and is housed in an SOT-363 surface-mount package. The device features a maximum collector current of 100 mA, a collector-emitter voltage (VCEO) of 45 V, and a collector-base voltage (VCBO) of 50 V. Power dissipation is rated at 200 mW with a transition frequency (fT) of 100 MHz. It operates within a temperature range of -55°C to +150°C and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix 'Q' indicates AEC-Q101 automotive qualification status against the official manufacturer datasheet. Confirm the package type is SOT-363 and that the component matches the BC857B series electrical characteristics before integration into production designs.
Select this component when a dual PNP transistor with automotive reliability is required. Compare the 200 mW power dissipation and 100 mA current limits against circuit requirements. Ensure the SOT-363 footprint aligns with the PCB layout constraints compared to single-transistor alternatives.
This part belongs to the BC857 series of small-signal transistors from Diodes Incorporated. The 'BS' designation typically indicates a dual configuration in an SOT-363 package, while the 'Q' suffix denotes compliance with automotive quality standards. It serves as a complement to NPN counterparts like the BC847 series.
BC857BS-7-F is a non-automotive equivalent. BC857BV-7-F offers similar dual PNP functionality in an SOT-563 package.