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The BC857CQ-7-F is a PNP small signal bipolar junction transistor manufactured by Diodes Incorporated. It operates with a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device features a DC current gain (hFE) ranging from 420 to 800 at an IC of -2.0 mA and VCE of -5V. It has a transition frequency of 200 MHz and a power dissipation of 310 mW in the SOT-23 package. Qualified to AEC-Q101 standards, it supports an operating temperature range from -65°C to +150°C.
Verify that the ordering suffix matches the specific reel size and quantity requirements for your production line. Confirm the component meets the required automotive qualification standards if used in vehicle electronics. Ensure the marking code K3G aligns with the expected product type. Check for PPAP capability documentation if mandated by your supply chain quality protocols.
Select this component when high DC current gain is required for low-level signal amplification or precise switching tasks. The SOT-23 package offers a compact footprint suitable for space-constrained designs. Consider the complementary BC847CQ for push-pull configurations. Verify thermal management capabilities against the specified power dissipation limits under your specific ambient conditions.
This part belongs to the BC857 series of PNP transistors designed for general-purpose use. It is specifically engineered to meet stringent automotive application requirements. The 'C' suffix indicates a tight binning range for current gain. The '-7-F' suffix denotes the tape and reel packaging format containing 3,000 units per reel.
The absolute maximum collector-base voltage (VCBO) is rated at -50 V.
Yes, the datasheet explicitly states it is ideally suited for automatic insertion.
The typical noise figure is 2 dB when measured at VCE = -5V, IC = -200µA, and RS = 2kΩ.