BC857S-TP-HF

Overview

The BC857S-TP-HF is a dual PNP small-signal bipolar junction transistor manufactured by Micro Commercial Components. It utilizes silicon epitaxial die construction and is housed in an SOT-363 surface-mount package. The device supports a maximum continuous collector current of 200 mA and operates with a collector-emitter breakdown voltage of 45 V. Key electrical parameters include a collector-base voltage rating of 50 V, an emitter-base voltage limit of 5 V, and a power dissipation capacity of 300 mW. The component features a gain-bandwidth product of 200 MHz and a DC current gain range from 125 to 630. It functions reliably within a temperature range of -55°C to +150°C.

Feature Summary

• Dual PNP configuration for compact circuit integration
• High-speed switching capability with 200 MHz bandwidth
• RoHS compliant lead-free finish

Applications

• Switching applications
• Audio frequency amplifier circuits

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm compliance status and pinout compatibility. Ensure that ordering information matches the exact part number variant required for the design. Cross-reference datasheet revisions to validate electrical characteristics before finalizing procurement specifications.

Selection Notes

Select this component when a dual PNP transistor in an SOT-363 package is required for space-constrained designs. Consider the 200 mA current rating and 300 mW power dissipation limits during thermal management planning. Verify that the 45 V collector-emitter voltage meets the circuit's operational requirements.

Part Context

This component belongs to the BC857S series of dual PNP transistors produced by Micro Commercial Components. It shares functional similarities with other BC857 variants but differs in packaging and dual-transistor configuration. The series is designed for general-purpose small-signal applications requiring high gain and fast switching speeds.

Replacement Considerations

BC857BSHE3-TP