SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC857S-TP is a dual PNP small-signal bipolar junction transistor manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in an SOT-363 surface-mount package. The device supports a maximum DC collector current of 200 mA and operates with a collector-emitter voltage of 45 V, a collector-base voltage of 50 V, and an emitter-base voltage of 5 V. Key electrical characteristics include a power dissipation rating of 300 mW, a transition frequency of 200 MHz, and a collector-emitter saturation voltage of 650 mV. The component functions within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix and manufacturer documentation when sourcing components. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure the received parts match the BC857S-TP designation exactly to maintain electrical parameter consistency. Cross-reference package markings against the official specification sheet to prevent counterfeit substitution during assembly preparation.
Select this component for designs requiring dual PNP transistors in a minimal footprint. The 200 mA current rating and 45 V breakdown voltage define the operational limits for load handling. Consider the 300 mW power dissipation constraint when calculating thermal management requirements for dense PCB layouts. Verify that the required hFE gain range aligns with the circuit's biasing needs.
This part belongs to the BC857S series of dual PNP transistors produced by Micro Commercial Components. It serves as a complementary counterpart to NPN variants within the broader BC857 family. The SOT-363 packaging standardizes its physical dimensions for automated surface-mount assembly processes commonly used in consumer electronics manufacturing.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer cross-reference lists for verified alternatives.