BC857SH6327XTSA1

Overview

The BC857SH6327XTSA1 is a dual PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-363 (SC-88) package with six pins, measuring 2 x 1.25 x 0.8 mm. The device features a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a collector-emitter saturation voltage of 250 mV. The component has a power dissipation rating of 250 mW, a gain-bandwidth product (fT) of 250 MHz, and a DC current gain (hFE) ranging from 200 to 630. It operates within a temperature range of -65 °C to +150 °C and holds AEC-Q100 qualification.

Feature Summary

• Dual PNP configuration integrated into a compact SOT-363 surface-mount package for space-efficient circuit design.
• AEC-Q100 qualified for automotive applications, ensuring reliability under specified stress conditions.
• High DC current gain range (200 to 630) supports effective signal amplification and switching operations.

Applications

• Automotive electronic systems requiring qualified discrete semiconductors.
• General-purpose signal amplification circuits utilizing dual PNP transistors.
• Switching applications in consumer electronics and industrial control modules.

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact binning and packaging specifications. Confirm component availability status as some listings indicate end-of-life or limited supply phases. Ensure compliance with RoHS directives and material content declarations prior to integration into final assemblies.

Selection Notes

Select this component when a dual PNP BJT with high current gain and automotive qualification is required. The SOT-363 package suits designs needing minimal PCB area. Verify that the 45 V collector-emitter voltage and 100 mA current limits align with the target circuit requirements. Consider the 250 mW power dissipation constraint for thermal management in dense layouts.

Part Context

This part belongs to the BC857 series of general-purpose PNP transistors produced by Infineon Technologies. It shares the BC857S family designation but includes specific suffixes indicating automated tape-and-reel packaging and automotive-grade screening. The component is distinct from single-transistor variants and other configurations within the broader BC85x lineup.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with generic BC857B or BC857C equivalents only if electrical parameters and package compatibility are verified through independent datasheet comparison.