BC857SH6794XTSA1

BC857SH6794XTSA1

  • Description:TRANS 2PNP 45V 0.1A PG-SOT363-PO
  • Series:-

SKU:e91ee68076fd Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2PNP 45V 0.1A PG-SOT363-PO
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:250mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Grade:-
  • Qualification:-

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BC857SH6794XTSA1

Overview

The BC857SH6794XTSA1 is a dual PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-363-6 package and utilizes silicon technology. The device features a maximum DC collector current of 100 mA, with a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. Key electrical parameters include a saturation voltage of 250 mV, power dissipation of 250 mW, and a gain-bandwidth product (fT) of 250 MHz. It operates within a temperature range of -65°C to +150°C and holds AEC-Q100 qualification.

Feature Summary

  • Dual PNP configuration integrated into a compact SOT-363-6 surface-mount package for space-efficient circuit designs.
  • AEC-Q100 qualified for automotive reliability standards, ensuring robust performance under varying thermal conditions.
  • High transition frequency capability supporting general-purpose switching and amplification applications.

Applications

  • Automotive signal processing circuits requiring AEC-Q100 compliance.
  • General-purpose switching and amplification in consumer electronics.
  • Low-voltage logic interface stages in portable devices.

Procurement Notes

Verify the specific suffix '6794' against official Infineon documentation to confirm the exact hFE binning or variant specifications, as ordering codes often dictate precise electrical tolerances. Confirm current lifecycle status directly with the manufacturer, as distribution listings may indicate end-of-life phases that differ from active production schedules. Ensure compatibility with required RoHS directives before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP topology is required in a minimal footprint. The SOT-363-6 package allows for two independent transistors in a single housing, reducing board space compared to individual packages. Consider the 250 mW power dissipation limit and 45 V voltage ratings to ensure operation remains within safe limits for low-power signal handling tasks.

Part Context

This part belongs to the BC857 series of general-purpose transistors from Infineon. While the base BC857 model typically refers to a single transistor in an SOT-23 package, the SH designation indicates a dual configuration in an SOT-363 case. This series is widely used in standard electronic designs where small size and reliable switching characteristics are prioritized over high-power handling capabilities.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific variant are not available in the provided source data. Engineers should consult official Infineon cross-reference tools or datasheets for verified alternatives that match the SOT-363-6 package and AEC-Q100 qualification requirements.

BC857SH6794XTSA1BC857SH6794XTSA1

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