BCM53DSF

BCM53DSF

$0.45
  • Description:TRANS 2PNP 80V 1A 6TSOP
  • Series:-

SKU:2c212baca374 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 80V 1A 6TSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP (Dual) Matched Pair
  • Current - Collector (Ic) (Max):1A
  • Voltage - Collector Emitter Breakdown (Max):80V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
  • Power - Max:500mW
  • Frequency - Transition:140MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:6-TSOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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BCM53DSF

Overview

The Nexperia BCM53DSF is a dual NPN bipolar junction transistor (BJT) housed in a TSOP-6 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 80 V and a collector-base voltage (VCBO) of 100 V, with an emitter-base voltage (VEBO) rating of 5 V. The device supports a continuous DC collector current of 1 A and a peak pulse current of 4.5 A. Key electrical parameters include a minimum DC current gain (hFE) of 63 and a maximum of 250, alongside a transition frequency (fT) of 155 MHz. Thermal characteristics specify a power dissipation of 400 mW, operating within a temperature range of -55°C to +150°C.

Feature Summary

  • Dual NPN configuration integrated into a compact TSOP-6 surface-mount package for space-constrained designs.
  • High collector current capability of 1 A suitable for medium-power switching applications.
  • Robust voltage ratings including 80 V collector-emitter and 100 V collector-base breakdown limits.

Applications

  • General-purpose switching circuits
  • Amplifier stages
  • Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix 'SF' against official Nexperia documentation to confirm tape-and-reel packaging orientation and quantity per reel. Ensure the ordering part number matches the exact electrical binning requirements for hFE and fT. Cross-reference the datasheet revision date to confirm compliance with current RoHS directives and material declarations before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN topology is required in a small outline package. The 80 V VCEO rating distinguishes it from lower-voltage alternatives like the BCX70 series. Verify that the 400 mW power dissipation at ambient conditions meets the thermal design constraints of the target application without requiring additional heatsinking.

Part Context

The BCM53DSF belongs to Nexperia's portfolio of general-purpose silicon NPN transistors. It shares the same internal die and pinout as the BCM53DSX variant, differing primarily in packaging format. This family is designed for cost-sensitive consumer and industrial electronics where moderate current handling and reliable switching performance are prioritized over high-frequency RF characteristics.

Replacement Considerations

The BCM53DSX is a confirmed equivalent part number offering identical electrical specifications. Both variants utilize the same TSOP-6 footprint. Verify that the specific reel packing configuration of the substitute aligns with existing assembly line equipment capabilities.

BCM53DSFBCM53DSF
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