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The BCM56DS-QF is a dual NPN bipolar junction transistor manufactured by Nexperia, housed in a TSOP-6 (SOT457) surface-mount package. It features a maximum collector-emitter voltage of 80 V and a collector-base voltage of 100 V, with an emitter-base voltage rating of 5 V. The device supports a continuous DC collector current of 1 A and dissipates up to 400 mW of power. Key electrical characteristics include a minimum DC current gain (hFE) of 63 and a maximum of 250, alongside a transition frequency of 155 MHz. Operating temperatures range from -55 °C to +150 °C.
Verify the specific suffix 'QF' against official Nexperia documentation to confirm packaging details and automotive qualification status. Ensure the ordered component matches the required TSOP-6 footprint and pinout configuration for your PCB layout. Cross-reference the datasheet revision date to guarantee compatibility with current manufacturing specifications.
Select this component when a dual NPN topology is required in a small form factor. The 80 V rating suits low-voltage switching applications. Verify that the 400 mW power dissipation limit aligns with your thermal management strategy. Confirm that the hFE range meets your circuit's gain requirements without additional compensation.
This part belongs to Nexperia's automotive-grade discrete transistor portfolio. It shares core electrical parameters with the standard BCM56DS but includes enhanced reliability testing consistent with AEC-Q101 qualifications. The TSOP-6 package offers space efficiency for dense board layouts common in modern automotive electronics.
Direct substitutes include the BCM56DS for non-automotive contexts. For equivalent automotive-qualified parts, verify availability of other Nexperia dual NPN devices in SOT457 packages with matching voltage and current ratings.