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The BCM56DS-QX is a dual NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a TSOP-6 (SOT457/SC-74) surface-mount package. The device supports a maximum DC collector current of 1 A and features a collector-emitter voltage (VCEO) of 80 V, with a collector-base voltage (VCBO) of 100 V and an emitter-base voltage (VEBO) of 5 V. Key electrical characteristics include a collector-emitter saturation voltage of 500 mV, power dissipation of 400 mW, and a gain-bandwidth product (fT) of 155 MHz. The component operates within a temperature range of -55 °C to +150 °C, with a DC current gain (hFE) ranging from a minimum of 63 to a maximum of 250.
Verify the specific suffix 'QX' against official Nexperia documentation to confirm automotive qualification status or specific tape-and-reel packaging requirements. Ensure the ordering part number matches the exact datasheet revision to avoid discrepancies in pinout or electrical tolerances during procurement.
Select this component when a dual NPN topology is required in a small SC-74 footprint. Consider the 155 MHz transition frequency and 400 mW power dissipation limits for high-speed or thermally constrained designs. Verify that the 80 V collector-emitter rating aligns with the target circuit's supply voltage and transient conditions.
This component belongs to Nexperia's portfolio of standard bipolar transistors designed for surface-mount assembly. The BC56 series typically offers a balance of current handling and voltage blocking capabilities. The 'Q' suffix often indicates compliance with automotive quality standards, while 'X' denotes reel packaging.
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official Nexperia cross-reference guides or distributor databases for verified equivalents.