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Product Detailed Parameters
- Description：TRANS 2NPN 65V 100MA 6-TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：65V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：200mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BCM846BS is an NPN/NPN matched double transistor housed in a SOT363-3 (SC-88) TSSOP6 surface-mounted plastic package. The internal transistors are fully isolated. Key electrical parameters include a collector-emitter voltage of 65 V and a continuous collector current of 100 mA per transistor. The DC current gain ranges from 200 to 450 at VCE = 5 V and IC = 2 mA. Matching characteristics ensure high precision, with base-emitter voltage matching limited to 2 mV and current gain matching ratios between 0.9 and 1.
Feature Summary
- NPN/NPN matched double transistor configuration
- Internally fully isolated transistors
- AEC-Q101 qualified for automotive applications
- High current gain and base-emitter voltage matching
Applications
- Current mirror circuits
- Differential amplifier stages
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package version and manufacturing site codes. Ensure the component meets AEC-Q101 qualification requirements if intended for automotive use. Confirm that the SOT363-3 package dimensions align with the target PCB footprint specifications before finalizing procurement orders.
Selection Notes
Select this component when precise matching between two NPN transistors is required within a compact SMD form factor. The device is suitable for designs needing high current gain consistency and low base-emitter voltage mismatch. Verify thermal resistance limits and power dissipation capabilities relative to the ambient temperature conditions of the final application environment.
Part Context
This device belongs to Nexperia's portfolio of matched double transistors designed for space-constrained surface-mount applications. It serves as a drop-in replacement for standard double transistors while offering improved matching characteristics. The SOT363-3 package provides a small footprint suitable for modern electronic devices requiring high component density.
Replacement Considerations
The datasheet identifies the BCM846BS as a drop-in replacement for standard double transistors. No specific alternative part numbers are listed in the provided documentation. Engineers should verify pinout compatibility and electrical parameter overlaps with existing components in the design.
FAQ
What is the maximum collector-emitter voltage for the BCM846BS?
The maximum collector-emitter voltage (VCEO) with an open base is 65 V.
How is the base-emitter voltage matching defined for this device?
The base-emitter voltage matching (VBE1−VBE2) is specified as a maximum of 2 mV under conditions of VCE = 5 V, IC = 2 mA, and Tamb = 25 °C.
Is the BCM846BS suitable for automotive applications?
Yes, the product has been qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
