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The BCM846BSHX is an NPN/NPN matched double transistor housed in a TSSOP6 (SOT363) surface-mount package. It supports a collector-emitter voltage of 65 V and a continuous collector current of 100 mA per transistor, with a peak collector current rating of 200 mA. The device features a DC current gain (hFE) ranging from 200 to 450 at 2 mA. Key matching specifications include a current gain ratio between 0.95 and 1.05 and a base-emitter voltage difference of no more than 2 mV. Total power dissipation reaches 400 mW per device, supporting junction temperatures up to 175 °C.
Verify the specific suffix 'X' against official Nexperia documentation to confirm if it denotes a distinct tape-and-reel variant or manufacturing site code. Ensure the ordered part matches the SOT363 footprint dimensions and pinout configuration defined in the datasheet to prevent assembly errors during PCB fabrication.
Select this component when precise matching between two NPN transistors is required within a compact SMD form factor. The low capacitance and high-temperature tolerance make it suitable for signal processing applications where thermal stability and minimal parasitic effects are critical design constraints.
This device belongs to the BCM846BSH family of matched double transistors. It serves as the NPN counterpart to the PNP/PNP BCM856BSH. Both devices utilize the same SOT363 package and share similar electrical characteristics tailored for differential pairs and current mirrors in small-signal applications.
Standard double transistors may serve as drop-in replacements if external matching is acceptable. Verify that substitute parts support the 175 °C junction temperature limit and match the SOT363 pinout configuration to ensure compatibility.