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The BCM846SE6327HTSA1 is a dual NPN bipolar junction transistor array manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 65V and a maximum continuous collector current of 100mA. The device operates with a transition frequency of 250MHz and dissipates up to 250mW of power. It is housed in a PG-SOT363-PO surface-mount package, equivalent to SOT-363 or SC-88. Key electrical characteristics include a DC current gain (hFE) of at least 200 at 2mA and 5V, a saturation voltage of 650mV at 5mA base and 100mA collector current, and a collector cutoff current of 15nA. The component supports a maximum junction temperature of 150°C.
This component is classified as obsolete and is no longer manufactured by Infineon Technologies. Verification of availability requires checking authorized distributors for remaining stock or approved substitute part numbers. Designers should confirm end-of-life status and lead times carefully before finalizing procurement plans.
Select this component only if the specific dual NPN configuration, 65V rating, and SOT-363 package are required. Due to its obsolete status, alternative components with similar electrical parameters and pin compatibility must be evaluated for new designs. Ensure that the replacement meets all thermal and current requirements.
The BCM846 series represents a family of small-signal bipolar transistors designed for general-purpose applications. The SE suffix typically denotes specific packaging and tape-and-reel configurations used for automated assembly. This particular variant integrates two NPN transistors into a single compact footprint to save board space.
Similar parts include BC846AS-7 from Diodes Incorporated and BC846BS,115 from Nexperia USA Inc. These alternatives offer comparable NPN dual configurations and should be verified for pinout and electrical parameter compatibility.