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The BCM847BS is an NPN/NPN matched double transistor housed in a SOT363-3 (SC-88) surface-mounted device plastic package. The internal transistors are fully isolated. Key electrical parameters include a collector-emitter voltage of 45 V and a collector current of 100 mA per transistor. The DC current gain ranges from 200 to 450 at VCE = 5 V and IC = 2 mA. Current gain matching is specified between 0.9 and 1, while base-emitter voltage matching is within 2 mV under identical conditions.
Verify the specific ordering suffix against Nexperia's official documentation to confirm package type and manufacturing site codes. Ensure compatibility with AEC-Q101 requirements if deploying in automotive environments. Confirm that the SOT363-3 footprint matches the target PCB design before finalizing procurement orders.
Select this component when matched transistor characteristics are critical for circuit symmetry. It serves as a direct substitute for the BC847BS series. Consider the thermal resistance values when designing heat dissipation strategies for high-density layouts or elevated ambient temperatures.
This device belongs to the BCM847 family of matched double transistors manufactured by Nexperia. It functions as the NPN counterpart to the PNP/PNP BCM857BS. The component represents a modernized version of the legacy BC847BS, updated to meet current automotive qualification standards and packaging specifications.
BCM857BS
The total power dissipation for the device is limited to 300 mW at an ambient temperature of 25 °C.
Matching is defined by subtracting the smaller VBE value from the larger one under conditions of VCE = 5 V, IC = 2 mA, and Tamb = 25 °C, with a maximum difference of 2 mV.
Yes, reflow soldering is the only recommended soldering method for the TSSOP6 (SOT363-3) package.