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Product Detailed Parameters
- Description：TRANS 2NPN 45V 100MA 6-TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：200mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：-
- Qualification：-
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Overview
The BCM847BSHF is an NPN/NPN matched double transistor manufactured by Nexperia, housed in a TSSOP6 (SOT363) surface-mount package. It features a collector-emitter voltage of 45 V and a continuous collector current of 100 mA per transistor. The device provides closely matched DC current gain (hFE range 200 to 450 at 2 mA) with a matching tolerance of 0.95 to 1.05. Base-emitter voltage matching is maintained within 2 mV. Total power dissipation reaches 400 mW per device, supporting operation up to a junction temperature of 175 °C.
Feature Summary
- Low collector capacitance for high-frequency performance
- Low collector-emitter saturation voltage
- Current gain and base-emitter voltage matching
- High-temperature applications up to 175 °C
Applications
- Current mirror
- Differential amplifier
Procurement Notes
Verify the specific suffix 'HF' against official Nexperia documentation to confirm reel specifications or tape-and-reel dimensions. Confirm that the ordering code matches the required packaging format before finalizing procurement orders.
Selection Notes
Select this component when precise current gain matching between two transistors is required in a compact footprint. The SOT363 package reduces board space compared to discrete components. Ensure thermal management supports the 400 mW total dissipation limit at elevated ambient temperatures.
Part Context
This part belongs to the BCM847 series of matched double transistors. It serves as a drop-in replacement for standard double transistors while offering reduced mutual interference between the internal transistors. The PNP/PNP complement is the BCM857BSH.
Replacement Considerations
BCM847BSH
FAQ
What is the maximum junction temperature for the BCM847BSHF?
The maximum junction temperature is 175 °C.
How is the DC current gain matched in this device?
The DC current gain matching ratio (hFE1/hFE2) is specified between 0.95 and 1.05.
What is the base-emitter voltage matching tolerance?
The base-emitter voltage difference (VBE1−VBE2) is limited to a maximum of 2 mV under specified conditions.
