SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCM847BSH is an NPN/NPN matched double transistor housed in a TSSOP6 (SOT363) surface-mounted plastic package. It supports a collector-emitter voltage of 45 V and a continuous collector current of 100 mA per transistor, with a peak collector current rating of 200 mA. The device features closely matched DC current gain (hFE range 200–450 at 2 mA) and base-emitter voltage matching within 2 mV. Total power dissipation reaches 400 mW for the dual device and 270 mW per transistor at 25 °C ambient temperature. Junction temperatures are supported up to 175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure that the procurement channel provides valid traceability for the component batch. Confirm compliance requirements such as RoHS status directly from the supplier before finalizing orders.
Select this component when precise matching of current gain or base-emitter voltage is required between two NPN transistors in a compact footprint. The SOT363 package offers space savings compared to discrete components. Verify thermal management needs, as the total power dissipation is shared between the two transistors within the single package.
This part belongs to Nexperia's general-purpose matched double transistor family. It serves as a drop-in replacement for standard double transistors in applications requiring symmetry. The PNP/PNP complement for this device is the BCM857BSH. The marking code '7A' identifies the type number on the package body.
The BCM847BSH is functionally compatible with other matched NPN double transistors in the SOT363 package, such as the BC847BSH, provided pinout and electrical limits align. Verify that substitute parts meet the specific hFE and VBE matching criteria required by the design.