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The BCM847DS,115 is an NPN/NPN matched double transistor manufactured by Nexperia USA Inc. It is housed in a SOT457 (SC-74) surface-mounted plastic package with six leads. The device features fully isolated internal transistors and is qualified according to the AEC-Q101 standard for automotive applications. Key electrical parameters include a collector-emitter voltage of 45 V, a collector current of 100 mA per transistor, and a total power dissipation of 380 mW per device at 25 °C ambient temperature. The DC current gain ranges from 200 to 450 at 2 mA collector current, with a transition frequency up to 250 MHz.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel size or tape width. Confirm that the component meets all required environmental standards for the intended application before finalizing procurement orders.
Select this component when precise matching of current gain and base-emitter voltage is required for dual-transistor circuits. Ensure the design accommodates the specified thermal resistance values and operates within the absolute maximum ratings defined in the datasheet.
This part belongs to the BCM847 series of matched double transistors. It serves as a drop-in replacement for standard discrete double transistors, reducing board space and assembly costs while maintaining high performance in signal processing applications.
The BMC857DS is the PNP/PNP complement. Verify pin compatibility and parameter symmetry if substituting with other matched pairs from different manufacturers.
The base-emitter voltage matching is specified as a maximum difference of 2 mV under test conditions of VCE = 5 V and IC = 2 mA.
Yes, the BCM847DS is qualified in accordance with the AEC-Q101 standard for stress test qualification of discrete semiconductors.
Reflow soldering is the only recommended soldering method for this component.