BCM856BS/ZLH

Description：TRANS 2NPN 45V 0.1A 6TSSOP
Series：-

SKU:ed027138f41f Category: Bipolar Transistor Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN 45V 0.1A 6TSSOP
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：6-TSSOP
Grade：-
Qualification：-

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BCM856BS/ZLH

Overview

The BCM856BS/ZLH is a PNP/PNP matched double transistor manufactured by Nexperia, housed in the SOT363 (SC-88) surface-mounted package. It features fully isolated internal transistors and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a collector-emitter voltage of -65 V, a collector current of -100 mA, and a DC current gain ranging from 200 to 450 at VCE = -5V and IC = -2mA. The device supports a junction temperature up to 150 °C and offers low collector capacitance with a transition frequency of 175 MHz.

Feature Summary

Current gain matching between transistors
Base-emitter voltage matching
AEC-Q101 qualified for automotive applications

Applications

Current mirror circuits
Differential amplifier configurations

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm manufacturing origin and tape-and-reel specifications. Ensure compatibility with standard SC-88 footprints during procurement planning.

Selection Notes

Select this component when matched PNP characteristics are required in a compact SMD form factor. Confirm that the SOT363 package dimensions and thermal resistance values meet the design constraints for the target application environment.

Part Context

This part belongs to the BCM856 series of matched double transistors. It serves as a drop-in replacement for standard discrete double transistors where size reduction and parameter matching are critical requirements for circuit performance.