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The BCM856BSH-Q is a PNP/PNP matched double transistor housed in a SOT363 (SC-88) TSSOP6 plastic surface-mounted package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA per transistor, with peak ratings of -200 mA. The device exhibits a DC current gain (hFE) ranging from 200 to 450 at -2 mA. Key electrical characteristics include a low collector capacitance of 1.8 pF and a collector-emitter saturation voltage of 200 mV. The component is qualified according to AEC-Q101 standards for automotive applications and supports junction temperatures up to 175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure that the procurement channel provides valid traceability records consistent with AEC-Q101 automotive qualification requirements. Confirm that the delivered components match the specified SOT363 package dimensions and marking codes before integration into production lines.
Select this component when precise matching between two PNP transistors is required within a compact footprint. The device is suitable for designs demanding low saturation voltage and minimal collector capacitance. Verify that the application operates within the specified thermal limits, considering the power dissipation constraints on FR4 PCBs. Ensure the circuit design accommodates the negative polarity inherent to PNP configurations.
This part belongs to Nexperia's family of matched double transistors designed for space-constrained surface-mount applications. It serves as the PNP counterpart to the NPN/NPN BCM846BSH-Q. The SOT363 package allows for high-density board layouts while maintaining performance characteristics comparable to larger standard double transistors.
BCM846BSH-Q is the NPN/NPN complement. Standard double transistors may serve as drop-in replacements if pin compatibility and electrical parameters align with the specific circuit requirements.