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The BCM856BSH-Q is a PNP/PNP matched double transistor housed in a SOT363 (SC-88) surface-mounted device plastic package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA per transistor. The DC current gain ranges from 200 to 450 at VCE = -5 V and IC = -2 mA. Key electrical characteristics include low collector capacitance of 1.8 pF and tight matching parameters, with base-emitter voltage matching limited to 2 mV. The device supports high-temperature operation up to 175 °C junction temperature.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets the required automotive qualification standards if intended for such environments. Cross-reference the pinout configuration with the target PCB footprint design to prevent installation errors during assembly.
Select this component when precise current gain and base-emitter voltage matching between two transistors is required within a single package. The SOT363 form factor is suitable for space-constrained designs. Ensure the application operates within the specified thermal limits and does not exceed the peak collector current ratings during transient conditions.
This part serves as the PNP complement to the NPN/NPN BCM846BSH-Q double transistor. Both devices share the same SOT363 package and are designed for matched pair applications. They are positioned as drop-in replacements for standard discrete double transistors in compact electronic circuits requiring matched characteristics.
The datasheet identifies it as a drop-in replacement for standard double transistors. Verify pin compatibility and electrical specifications before substituting other PNP matched pairs.