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Product Detailed Parameters
- Description：TRANS 2PNP 65V 100MA 6-TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual) Matched Pair
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：65V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：300mW
- Frequency - Transition：175MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The BCM856BSH is a PNP/PNP matched double transistor manufactured by Nexperia, housed in the SOT363 (SC-88) surface-mounted device plastic package. It features fully isolated internal transistors with a collector-emitter voltage of -65 V and a continuous collector current of -100 mA per device. The component achieves a DC current gain (hFE) ranging from 200 to 450 at VCE = -5V and IC = -2mA. Key electrical characteristics include a transition frequency (fT) of 175 MHz, low collector capacitance of 2.2 pF, and a total power dissipation limit of 300 mW. It operates within an ambient temperature range of -55°C to +150°C.
Feature Summary
- Current gain matching between transistors
- Base-emitter voltage matching
- Drop-in replacement for standard double transistors
- AEC-Q101 qualified
Applications
- Current mirror
- Differential amplifier
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape-and-reel specifications or marking codes. Confirm that the AEC-Q101 qualification status aligns with automotive application requirements. Ensure the selected variant matches the required SOT363 package dimensions and pin configuration for proper PCB footprint integration.
Selection Notes
Select this component when matched transistor performance is critical for circuit symmetry. The SOT363 package offers a very small footprint suitable for space-constrained designs. Consider the thermal resistance values if operating near maximum power dissipation limits. Verify that the required hFE matching and VBE matching tolerances meet the specific design constraints of the target application.
Part Context
The BCM856BSH belongs to the BCM856BS/BCM856DS family of PNP/PNP matched double transistors. While the BCM856BS uses the SOT363 package, the BCM856DS utilizes the larger SOT457 package. Both variants share similar electrical characteristics but differ in physical dimensions and power dissipation capabilities. The NPN complement for this series is the BCM846BSH.
Replacement Considerations
BCM856BS
FAQ
What is the maximum collector-base voltage for the BCM856BSH?
The maximum collector-base voltage (VCBO) is -80 V.
Does the BCM856BSH support high-temperature applications?
Yes, the datasheet indicates suitability for high-temperature applications up to 175 °C junction temperature, with an operating ambient range of -55 °C to +150 °C.
What is the typical noise figure of the BCM856BSH?
The typical noise figure is 1.6 dB at VCE = -5V, IC = -0.2 mA, RS = 2k Ω, and f = 10 Hz to 15.7 kHz.
