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The Nexperia BCM857BS,115 is a PNP/PNP matched double transistor housed in a SOT363-3 (SC-88) TSSOP6 surface-mounted package. It features fully isolated internal transistors with a collector-emitter voltage of -45 V and a continuous collector current of -100 mA per device. The component provides a minimum DC current gain of 200 at -2 mA and -5 V, with a transition frequency reaching 175 MHz. Total power dissipation is rated at 300 mW, and the junction temperature maximum is 150 °C.
Verify the specific ordering suffix to confirm package type and reel specifications. Confirm that the non-automotive qualified status aligns with project requirements, as automotive alternatives are designated with different suffixes. Ensure compatibility with standard reflow soldering profiles for the SOT363-3 package.
Select this component when matched PNP characteristics are required in an ultra-small footprint. The low collector capacitance and high current gain make it suitable for general-purpose switching and amplification where board space is limited. Verify thermal resistance limits against the expected ambient operating conditions.
This part belongs to the BCM857 series of matched double transistors. It serves as a drop-in replacement for standard double transistors in compact designs. The SOT363-3 package allows for reduced pick-and-place costs and minimized board space compared to larger discrete packages.
BCM857BV,115
No, this specific product data sheet indicates the product has been changed to non-automotive qualification. Automotive versions are available under different designations.
The base-emitter voltage matching (VBE1−VBE2) is specified as a maximum of 2 mV at VCE = -5 V, IC = -2 mA, and Tamb = 25 °C.