BCM857DS-QX

Overview

The Nexperia BCM857DS-QX is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. It features an isolated dual configuration within a SOT-457 package, providing six terminals. The device supports a maximum DC collector current of -100 mA and withstands a collector-emitter voltage (VCEO) of -45 V. Additional electrical ratings include a collector-base voltage (VCBO) of -50 V and an emitter-base voltage (VEBO) of -5 V. The component exhibits a minimum DC current gain (hFE) of 200 and a transition frequency (fT) of 175 MHz. Power dissipation is rated at 380 mW, with an operating temperature range spanning from -65 °C to +150 °C. It complies with AEC-Q101 automotive standards.

Feature Summary

• Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in vehicle electronics.
• High current gain capability ensures efficient switching and amplification in low-power signal processing circuits.
• Compact SOT-457 surface-mount packaging facilitates space-constrained printed circuit board layouts.

Applications

• Automotive radar sensor modules requiring reliable discrete components.
• General-purpose switching and amplification in automotive electronic control units.
• Signal conditioning circuits within advanced driver assistance systems (ADAS).

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and AEC-Q101 qualification requirements relevant to your target application environment. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when designing for automotive environments necessitating AEC-Q101 certification. The SOT-457 package is suitable for high-density PCB designs. Verify that the required collector current and voltage ratings align with the -100 mA and -45 V limits. Consider the thermal management capabilities provided by the 380 mW power dissipation rating during steady-state operation.

Part Context

This part belongs to the BCM857 series of dual PNP transistors manufactured by Nexperia. The series is engineered for general-purpose applications, with the -QX suffix indicating automotive qualification. It shares core electrical characteristics with other variants in the family but differs in packaging and specific qualification standards.

Replacement Considerations

Direct substitutes include BCM857DS,115 and BCM857DS,135. These alternatives share identical electrical parameters and the SOT-457 package. Verify that the replacement variant meets the specific automotive qualification requirements if applicable to the design.

FAQ

What is the maximum collector-emitter voltage for the BCM857DS-QX?

The maximum collector-emitter voltage (VCEO) is specified as -45 V.

Does the BCM857DS-QX meet automotive reliability standards?

Yes, the component is qualified according to the AEC-Q101 standard for automotive applications.

What is the transition frequency of this transistor?

The transition frequency (fT) is rated at 175 MHz.