SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCM857QASZ is a PNP/PNP matched double transistor manufactured by Nexperia, housed in an ultra-small DFN1010B-6 (SOT1216) leadless surface-mounted device plastic package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA per transistor. The device exhibits a DC current gain ranging from 200 to 450 at -2 mA. Key matching specifications include a current gain ratio between 0.95 and 1.05, and a base-emitter voltage difference of no more than 2 mV. Qualified under AEC-Q101 standards, it operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape quantities. Ensure that the component meets the required AEC-Q101 qualification standards for the intended automotive application environment before finalizing procurement orders.
Select this component when precise matching between two PNP transistors is required for analog signal processing. The DFN1010B-6 package offers a compact footprint suitable for space-constrained PCB layouts. Consider the thermal resistance characteristics and power dissipation limits relative to the expected operating ambient temperature and PCB copper area.
This part belongs to the BCM857QAS family of matched double transistors designed for high-density surface-mount assembly. It serves as the PNP counterpart to the NPN/NPN BCM847QAS device. The SOT1216 package variant provides a low-profile solution compared to traditional dual-transistor packages while maintaining electrical performance suitable for precision analog applications.
Direct drop-in replacements are not explicitly listed in the provided datasheet. Designers should evaluate alternative matched PNP double transistors with compatible pinouts, voltage ratings, and matching tolerances if substitution is necessary.