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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.25W SOT363
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：130MHz
- Power - Max：250mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
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Overview
The BCR 133S H6444 is an NPN Silicon Digital Transistor from the Infineon BCR133 series, housed in a SOT-363 package. It integrates two internally isolated transistors with matched characteristics within a single multichip unit. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The device features built-in bias resistors where R1 and R2 are typically 10 kΩ each, yielding a resistor ratio of 1. It exhibits a minimum DC current gain (hFE) of 30 and a transition frequency (fT) of 130 MHz.
Feature Summary
- Integrates two internally isolated NPN transistors with good matching in one multichip package
- Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) simplify circuit design
- Qualified according to AEC-Q101 standards for automotive applications
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Drive circuits
Procurement Notes
Verify component authenticity through authorized channels. Confirm RoHS compliance and Pb-free status. Check datasheet revisions for updates on thermal resistance and maximum ratings. Ensure storage conditions remain within specified limits to maintain performance integrity.
Selection Notes
Select this dual-transistor variant when space constraints require two matched NPN units in a compact SOT-363 footprint. Verify that the 50 V collector-emitter voltage and 100 mA current ratings align with load requirements. Consider the 250 mW power dissipation capability relative to ambient thermal conditions.
Part Context
This component belongs to the BCR133 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR133 (single transistor in SOT-23) and BCR133W (single transistor in SOT-323). The 'S' suffix denotes the dual-transistor configuration in the SOT-363 package.
Replacement Considerations
BCR133S E6327XT
FAQ
What is the typical value of the internal bias resistors?
The typical values for both R1 and R2 are 10 kΩ.
What is the maximum total power dissipation for the BCR133S?
The maximum total power dissipation is 250 mW when the case temperature (TS) is less than or equal to 115°C.
Is this component qualified for automotive applications?
Yes, the BCR133S is qualified according to AEC-Q101 standards.
