SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCR141S H6727 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT363 (SC-74) surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single multichip module. The device features built-in bias resistors of 22 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 50 V, a maximum total power dissipation of 250 mW, and a transition frequency (fT) of 130 MHz at IC = 10 mA. It meets AEC-Q101 qualification standards.
Verify the specific ordering suffix H6727 against official Infineon documentation to confirm packaging details and availability status. Confirm RoHS compliance and Pb-free status as stated in the datasheet. Check for any discontinuation notices or end-of-life notifications directly from the manufacturer before procurement planning.
Select this component when dual, isolated NPN switching functionality is required in a compact footprint. The SOT363 package supports high-density PCB layouts. Ensure the 50 V collector-emitter voltage rating and 250 mW power dissipation meet the application's thermal and electrical requirements. Verify that the 22 kΩ internal bias resistors align with the desired drive current levels.
The BCR141 series includes variants like BCR141F, BCR141U, and BCR141W, which differ primarily in their package types (TSFP-3, SC74, SOT323) while maintaining similar electrical characteristics. The 'S' designation specifically denotes the SOT363 package containing two transistors. This series is designed for applications requiring multiple discrete transistors in a space-constrained environment.
Direct replacements must match the SOT363 package, dual NPN configuration, and 22 kΩ bias resistor values. Verify equivalent VCEO ratings (≥50 V) and fT specifications. Consult Infineon's official cross-reference tools for confirmed substitutes.