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The Diotec Semiconductor BCR08PN is an SMD digital transistor housed in a SOT-363 package, integrating two complementary NPN and PNP transistors with internal bias resistors. It features a typical input resistor R1 of 2.2 kΩ and a resistance ratio (R1/R2) of 0.047. The device supports a maximum collector current of 100 mA and power dissipation of 250 mW. Collector-emitter voltage ratings are 50 V for both polarities, while the collector-base voltage is 50 V and emitter-base voltage is 6 V. Operating junction temperature ranges from -55°C to +150°C.
Verify the specific suffix designation when ordering, as variants such as -Q or -AQ indicate AEC-Q101 compliance or qualification status. Confirm that the component meets the required automotive or commercial standards before finalizing procurement specifications. Ensure the selected part number aligns with the intended application environment and regulatory constraints.
Select the BCR08PN when a compact solution for simultaneous NPN and PNP switching is required. The integrated 2.2 kΩ input resistor simplifies circuit design by reducing external component count. Consider the 50 V collector-emitter rating and 100 mA current capacity to ensure adequate headroom for the target load conditions.
This component belongs to the BCR series of SMD digital transistors manufactured by Diotec Semiconductor. The series includes models with varying resistor values, such as BCR10PN and BCR47PN, to accommodate different logic drive requirements. All units share the same SOT-363 footprint and fundamental electrical characteristics.
Direct substitutes include other BCR series parts like BCR10PN or BCR12PN if resistor values differ. Verify pinout compatibility and thermal resistance specifications when replacing with components from other manufacturers.