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The BCR08PNE6433HTMA1 is a dual digital transistor kit manufactured by Infineon Technologies, featuring one NPN and one PNP silicon device. It is housed in a surface-mount SOT-363 package with six pins. The component supports a maximum collector-emitter voltage of 50 V for the NPN section and offers a typical input resistance of 2.2 kOhms with a resistor ratio of 0.047. It provides a minimum DC current gain (hFE) of 70 and handles a continuous collector current of 100 mA. The unit dissipates up to 250 mW of power and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix E6433 against official Infineon documentation to confirm packaging details such as reel size or tape dimensions. Ensure compatibility with automated pick-and-place equipment specifications before procurement. Confirm RoHS compliance status through the manufacturer's latest environmental declaration.
Select this component when a matched NPN/PNP pair is required in a minimal footprint. The 2.2 kOhm input resistance suits standard logic interfaces. Verify that the 50V voltage rating meets the system requirements. Consider the SOT-363 thermal characteristics for the intended power dissipation environment.
This part belongs to the BCR08PN series of dual digital transistors from Infineon. It serves as an integrated solution replacing discrete transistor pairs. The HTMA1 suffix indicates the specific manufacturing traceability and packaging configuration defined by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon's official replacement guide or distributor cross-reference lists for verified alternatives.