BCR08PNE6433HTMA1

BCR08PNE6433HTMA1

  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-

SKU:d8d0b56ac851 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:170MHz
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO

Download product information

BCR08PNE6433HTMA1

Overview

The BCR08PNE6433HTMA1 is a dual digital transistor kit manufactured by Infineon Technologies, featuring one NPN and one PNP silicon device. It is housed in a surface-mount SOT-363 package with six pins. The component supports a maximum collector-emitter voltage of 50 V for the NPN section and offers a typical input resistance of 2.2 kOhms with a resistor ratio of 0.047. It provides a minimum DC current gain (hFE) of 70 and handles a continuous collector current of 100 mA. The unit dissipates up to 250 mW of power and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates complementary NPN and PNP transistors into a single compact package for space-constrained designs.
  • Includes built-in base resistors to simplify circuit design and reduce external component count.
  • High thermal stability allows operation at junction temperatures up to 150°C.

Applications

  • Switching applications requiring complementary logic levels.
  • Driver circuits for low-power loads.
  • Logic level translation between different voltage domains.

Procurement Notes

Verify the specific ordering suffix E6433 against official Infineon documentation to confirm packaging details such as reel size or tape dimensions. Ensure compatibility with automated pick-and-place equipment specifications before procurement. Confirm RoHS compliance status through the manufacturer's latest environmental declaration.

Selection Notes

Select this component when a matched NPN/PNP pair is required in a minimal footprint. The 2.2 kOhm input resistance suits standard logic interfaces. Verify that the 50V voltage rating meets the system requirements. Consider the SOT-363 thermal characteristics for the intended power dissipation environment.

Part Context

This part belongs to the BCR08PN series of dual digital transistors from Infineon. It serves as an integrated solution replacing discrete transistor pairs. The HTMA1 suffix indicates the specific manufacturing traceability and packaging configuration defined by the manufacturer.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon's official replacement guide or distributor cross-reference lists for verified alternatives.

BCR08PNE6433HTMA1BCR08PNE6433HTMA1

Click on the inquiry