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The BCR108SE6433HTMA1 is an NPN Silicon Digital Transistor from the BCR108 series, manufactured by Infineon Technologies. It features two internally isolated transistors with good matching within a single multichip package. The device incorporates built-in bias resistors with typical values of R1 = 2.2 kΩ and R2 = 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The transition frequency (fT) is typically 170 MHz, and the DC current gain (hFE) has a minimum value of 70. It is qualified according to AEC-Q101 standards.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific E6433 ordering suffix matches project requirements. Check for RoHS compliance status as indicated in official documentation. Ensure storage conditions adhere to specified limits to maintain device integrity prior to assembly.
Select this component when dual isolated NPN digital transistor functionality is required in a compact form factor. The SOT363 package suits space-constrained designs. Verify that the 50 V collector-emitter voltage and 100 mA current ratings align with load requirements. Consider the thermal resistance characteristics for heat dissipation planning in the final application.
This part belongs to the BCR108 series of NPN Silicon Digital Transistors. The series includes variants like BCR108 and BCR108W, which differ in package types such as SOT23 and SOT323. The BCR108S variant specifically denotes the dual-transistor configuration housed in the SOT363 package, offering integrated biasing solutions for efficient signal processing.
Public confirmed substitute part numbers are not available in the provided source material.