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The BCR108SH6433XTMA1 is an NPN silicon digital transistor from the BCR108 series, housed in a SOT-363 package. It integrates two internally isolated transistors with good matching within a single multichip package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The device features a typical input resistor (R1) of 2.2 kΩ and a resistor ratio (R1/R2) of 0.047. It operates within a junction temperature range of -65°C to 150°C and meets AEC-Q101 qualification standards.
Verify component authenticity by checking the marking code 'WHs' on the SOT-363 package against official Infineon documentation. Confirm the part number suffix matches the specific reel orientation requirements for the BCR108S variant. Ensure compliance with RoHS lead-free packaging specifications during procurement.
Select this component when dual isolated NPN switching functionality is required in a minimal footprint. The SOT-363 package supports high-density surface mount assembly. Consider the 250 mW power dissipation limit relative to the operating case temperature. Verify that the 50 V breakdown voltage aligns with the system's maximum signal levels.
This part belongs to the BCR108 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR108 (SOT-23) and BCR108W (SOT-323). The BCR108S specifically denotes the dual-transistor configuration in the SOT-363 package, distinguishing it from single-transistor models within the same family.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Infineon replacement guides or distributor compatibility databases.