BCR10PNH6727XTSA1

Overview

The BCR10PNH6727XTSA1 is a dual pre-biased bipolar junction transistor (BJT) featuring one NPN and one PNP unit in a PG-SOT363-6 surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device has a transition frequency of 130 MHz and a total power dissipation of 250 mW. Internal biasing resistors are configured as R1 = 10 kΩ and R2 = 10 kΩ. Saturation voltage is limited to 0.3 V, with an input turn-on voltage range of 1 V to 2.5 V.

Feature Summary

• Dual configuration integrating one NPN and one PNP pre-biased transistor within a single compact package.
• Integrated base biasing network eliminates the need for external discrete resistors in switching applications.
• Optimized low saturation voltage characteristics ensure efficient signal switching and minimal power loss.

Applications

• General-purpose digital switching circuits
• Interface logic level translation between microcontrollers and peripheral devices
• High-speed signal processing in consumer electronics

Procurement Notes

Verify the specific suffix H6727XTSA1 against official Infineon documentation to confirm the exact resistor tolerance and binning specifications. Ensure the ordering part number matches the required package variant PG-SOT363-6. Cross-reference the datasheet revision date to validate electrical parameter limits before finalizing procurement orders.

Selection Notes

Select this component when space constraints require dual switching elements in a single footprint. The integrated biasing simplifies PCB layout by reducing component count. Verify that the 50 V rating and 100 mA current capacity meet the specific circuit requirements. Consider the 130 MHz frequency limit for high-speed application compatibility.

Part Context

This component belongs to the BCR series of pre-biased transistors manufactured by Infineon Technologies. These devices are designed to replace multiple discrete components, offering a simplified solution for digital switching tasks. The SOT-363 package provides a small form factor suitable for dense surface-mount assembly in modern electronic designs.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Generic equivalents may differ in internal resistor values or switching speeds. Validate pinout compatibility and thermal performance before substituting to ensure circuit integrity.

FAQ

What is the internal resistor configuration for this dual transistor?

The device features integrated biasing resistors with R1 equal to 10 kΩ and R2 equal to 10 kΩ for both the NPN and PNP units.

What is the maximum power dissipation capability?

The total power dissipation (Ptot) is rated at a maximum of 250 mW under standard operating conditions.