BCR10PNH6730XTMA1

Overview

The BCR10PNH6730XTMA1 is a dual pre-biased NPN/PNP transistor in SOT-363 packaging. It features an fT of 130 MHz, minimum hFE of 30, and maximum ICBO of 100 nA. Power dissipation is 250 mW with VCBO, VCEO at 50 V and VEBO at 10 V. Saturation voltage VCE(sat) is max 0.3 V. Input voltage Vi(off) is max 1.5 V (100µA/5V), while Vi(on) ranges from 1 to 2.5 V (2mA/0.3V). Internal resistors R1/R2 are 10 kΩ each.

Feature Summary

• Integrates dual NPN and PNP transistors with built-in biasing resistors for simplified circuit design
• Optimized for high-speed switching applications with a transition frequency of 130 MHz
• Low saturation voltage ensures efficient performance in digital logic interfaces

Applications

• Digital logic level shifting circuits
• Switching applications in consumer electronics
• Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific variant matches the required resistor values and polarity configuration. Cross-reference the datasheet version to validate electrical characteristics. Ensure compliance with RoHS directives as specified in the material content sheet. Check for any recent lifecycle status updates before finalizing procurement plans.

Selection Notes

Select this component when space-constrained designs require dual transistor functionality with integrated biasing. The SOT-363 package offers a compact footprint suitable for dense PCB layouts. Consider the 50 V breakdown voltage limits for low-voltage signal processing tasks. Evaluate the 130 MHz frequency response against the target application's switching speed requirements to ensure adequate performance margins.

Part Context

This device belongs to Infineon's portfolio of pre-biased bipolar junction transistors. It combines two transistors with internal resistors into a single surface-mount package. The product line targets applications needing simplified biasing networks. The SOT-363 form factor provides a standardized solution for dual-transistor needs in modern electronic systems.

Replacement Considerations

• BCR10PNH6327XTSA1

FAQ

What are the internal resistor values?

The internal resistors R1 and R2 are both 10 kΩ.

Is this a single or dual transistor device?

It is a dual transistor containing one NPN and one PNP unit.