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The BCR116SE6327BTSA1 is an NPN silicon digital transistor from Infineon Technologies, belonging to the BCR116 series. It features a single configuration with built-in bias resistors in a SOT-363-6 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and minimum DC current gain (hFE) of 70. The typical input resistor is 4.7 kOhms with a resistor ratio of 0.1. It operates within a temperature range of -65°C to +150°C and holds AEC-Q100 qualification for automotive applications.
Verify the exact suffix against official Infineon documentation to confirm pinout and electrical tolerances. Confirm end-of-life status as similar BCR116 variants are marked obsolete. Request latest datasheet revision for accurate thermal resistance values before finalizing procurement plans.
Select this component when a compact SOT-363 footprint is required for NPN digital switching. Ensure the 4.7 kOhm base resistor aligns with the driving source impedance. Verify that the 100 mA collector current meets load requirements without exceeding power dissipation limits in the target enclosure.
This part is a specific tape-and-reel variant of the BCR116 family. It shares core electrical characteristics with other BCR116 devices but differs in packaging and ordering suffixes. It serves as a pre-biased solution for replacing discrete resistor-transistor networks in space-constrained designs.
BCR116SH6327XTSA1: Similar NPN digital transistor in SOT-363 package with comparable electrical specifications.