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The BCR119SH6433XTMA1 is an NPN silicon digital transistor from the BCR119 series, manufactured by Infineon Technologies. It features two internally isolated transistors with good matching within a single SOT-363 package. The device includes a built-in input resistor (R1) of 4.7 kΩ and is designed for switching, inverter, interface, and driver circuits. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a DC collector current (IE) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The transition frequency (fT) is typically 150 MHz, and it operates within a junction temperature range of -65°C to 150°C.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS requirements and check for any regional distribution restrictions or end-of-life notifications before procurement.
Select this component when dual NPN digital transistors with integrated base resistors are required in a small surface-mount package. Consider the 4.7 kΩ internal resistance value and the 50 V voltage rating to ensure compatibility with the target logic levels and load conditions.
This part belongs to the BCR119 series of NPN silicon digital transistors. The 'S' designation indicates the SOT-363 package containing two transistors, while the suffix 'H6433XTMA1' specifies the manufacturing lot, packaging format, and material composition details defined by Infineon.
Check for direct pin-compatible alternatives within the BCR119 family, such as BCR119F or BCR119W, ensuring the package and electrical ratings match the original design requirements.
The typical value of the built-in input resistor (R1) is 4.7 kΩ.
Yes, the BCR119S is qualified according to the AEC-Q101 standard.
The maximum collector-emitter voltage (VCEO) is 50 V.