BCR133SB6327XT

Overview

The BCR133SB6327XT is an NPN silicon digital transistor from the BCR133 series, featuring two internally isolated transistors with good matching within a single SOT-363 package. It integrates bias resistors R1 and R2, both typically 10 kΩ, with a resistor ratio of 1. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The device exhibits a DC current gain (hFE) minimum of 30, a transition frequency (fT) of 130 MHz, and operates within a junction temperature range of -65°C to 150°C.

Feature Summary

• Dual configuration containing two internally isolated NPN transistors with matched characteristics in one multichip package.
• Integrated bias network consisting of two 10 kΩ resistors for simplified circuit design.
• Automotive qualification compliant with AEC-Q101 standards.

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Drive circuits

Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm that the specific ordering suffix matches the required packaging format and automotive grade specifications. Ensure compliance with RoHS directives and check for any relevant material content declarations prior to integration into production assemblies.

Selection Notes

Select this component when a dual-transistor solution with integrated biasing is required in a compact surface-mount footprint. The SOT-363 package provides space efficiency compared to discrete components. Consider the 250 mW power dissipation limit and thermal resistance characteristics relative to the expected operating environment and ambient temperatures.

Part Context

This part belongs to the BCR133 series of NPN silicon digital transistors manufactured by Infineon Technologies. The 'S' designation indicates the dual-transistor variant housed in an SOT-363 package, distinguishing it from the single-transistor BCR133 (SOT-23) and BCR133W (SOT-323) versions within the same product family.

Replacement Considerations

Direct pin-compatible replacements within the same series include BCR133E6327XT (single transistor, SOT-23) and BCR135WH6327XT (single transistor, SOT-323). Verify package dimensions and internal resistor values when substituting with other manufacturers' parts.

FAQ

What is the maximum total power dissipation for the BCR133S?

The maximum total power dissipation (Ptot) for the BCR133S is 250 mW, provided the case temperature (TS) does not exceed 115°C.

How are the internal resistors configured in the BCR133S?

The BCR133S contains two internally isolated transistors, each with a built-in bias resistor. Both R1 and R2 have a typical value of 10 kΩ, resulting in a resistor ratio (R1/R2) of 1.

Is the BCR133SB6327XT qualified for automotive applications?

Yes, the BCR133 series, including the BCR133S variant, is qualified according to the AEC-Q101 standard for stress test qualification of discrete semiconductors.