BCR133SE6327BTSA1

Overview

The BCR133SE6327BTSA1 is an NPN Silicon Digital Transistor from the BCR133 series, housed in a SOT-363 (SC-88) surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single multichip unit. The device features built-in bias resistors of 10 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at case temperatures up to 115°C. The transition frequency (fT) reaches 130 MHz, and it operates within a junction temperature range of -65°C to +150°C.

Feature Summary

• Integrates two internally isolated NPN transistors with good matching in one compact multichip package
• Includes built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) for simplified circuit design
• Qualified according to AEC-Q101 standards for automotive applications
• Provides high switching speed with a transition frequency of 130 MHz

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Drive circuits

Procurement Notes

Verify the specific suffix 'E6327B' against official Infineon documentation to confirm tape-and-reel specifications and marking codes. Confirm RoHS compliance status and lead-free packaging details directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component when dual isolated NPN digital transistor functionality is required in a small footprint. Ensure the application voltage does not exceed 50 V and current remains below 100 mA. Verify thermal management requirements against the 250 mW power dissipation limit at the expected operating case temperature.

Part Context

This part belongs to the BCR133 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR133 (SOT-23), BCR133S (SOT-363), and BCR133W (SOT-323). All variants share similar electrical characteristics but differ in package type and pin configuration.

Replacement Considerations

Direct replacements must match the SOT-363 package and dual NPN digital transistor configuration. Verify that any substitute meets the 50 V VCEO, 100 mA IC, and 10 kΩ internal resistor requirements. Check for equivalent AEC-Q101 qualification if used in automotive contexts.

FAQ

What is the maximum total power dissipation for the BCR133S variant?

The maximum total power dissipation is 250 mW when the case temperature (TS) is less than or equal to 115°C.

How are the internal resistors configured in the BCR133S?

The BCR133S contains two internally isolated transistors, each with a built-in bias resistor of 10 kΩ (R1 and R2).

Is the BCR133S qualified for automotive applications?

Yes, the BCR133 series components are qualified according to the AEC-Q101 standard.