BCR133SE6433BTMA1

Overview

The BCR133SE6433BTMA1 is an NPN silicon digital transistor from the Infineon BCR133 series, housed in a SOT-363 surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single multichip module. The device features built-in bias resistors of 10 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a transition frequency (fT) of 130 MHz at IC = 10 mA. The DC current gain (hFE) has a minimum value of 30. Total power dissipation is rated at 250 mW for this package type.

Feature Summary

• Integrates two internally isolated NPN transistors with good matching characteristics in one multichip package
• Includes built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) to simplify circuit design
• Qualified according to AEC-Q101 standards for automotive applications

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Drive circuits

Procurement Notes

Verify the specific ordering suffix E6433BTMA1 against official Infineon documentation to confirm the exact packaging format and reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as these details are subject to change and are not included in the technical datasheet.

Selection Notes

Select this component when a dual-channel NPN digital transistor solution is required in a compact SOT-363 footprint. The integrated 10 kΩ bias resistors reduce external component count. Ensure the 50 V collector-emitter voltage and 100 mA current ratings meet the application requirements. Verify thermal management capabilities given the 250 mW total power dissipation limit.

Part Context

This part belongs to the BCR133 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR133 (SOT-23), BCR133S (SOT-363), and BCR133W (SOT-323). The 'S' designation indicates the dual-transistor configuration in the SOT-363 package, distinguishing it from single-transistor versions in other packages.

Replacement Considerations

Direct replacements must match the SOT-363 package, NPN polarity, dual-transistor configuration, and 10 kΩ internal resistor values. Verify that any substitute meets the same AEC-Q101 qualification if used in automotive contexts. Check pinout compatibility carefully as package markings may vary between manufacturers.