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The BCR133SH6327XTSA1 is an NPN silicon digital transistor from the BCR133 series, housed in a SOT-363 (SC-88) surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single multichip module. The device features built-in bias resistors of 10 kΩ each (R1 and R2). Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation of 250 mW at a case temperature up to 115°C. It operates within a junction temperature range of -65°C to 150°C and meets AEC-Q101 qualification standards.
Verify the specific suffix SH6327XTSA1 against official Infineon documentation to confirm packaging details and reel orientation requirements. Ensure compliance with RoHS standards and check for any end-of-life notices or obsolescence warnings prior to finalizing procurement plans.
Select this component when dual isolated NPN switching functionality is required in a minimal footprint. The integrated 10 kΩ bias resistors reduce external component count. Verify that the 250 mW power dissipation limit and 50 V voltage rating align with the target application's thermal and electrical constraints.
This part belongs to the BCR133 series of NPN silicon digital transistors. The 'S' designation indicates the SOT-363 package containing two isolated transistors. Other variants in the series include BCR133 (SOT-23) and BCR133W (SOT-323), offering different pin configurations and power dissipation capabilities.
Direct substitutes within the same family include BCR133 (SOT-23) and BCR133W (SOT-323). Cross-package replacements require verification of pin compatibility and thermal performance differences between SOT-23, SOT-323, and SOT-363 packages.
The device contains two built-in bias resistors, R1 and R2, both with a typical value of 10 kΩ.
Yes, the BCR133 series is qualified according to the AEC-Q101 standard.
The BCR133S variant integrates two internally isolated NPN transistors with good matching characteristics.