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The BCR133SH6433XTMA1 is an NPN silicon digital transistor from the BCR133 series, housed in a surface-mount SOT-363 package. It integrates two internally isolated transistors with matched characteristics within a single multichip component. The device features built-in bias resistors of 10 kΩ each (R1 and R2). Key electrical ratings include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 250 mW at case temperatures up to 115°C. It operates within a junction temperature range of -65°C to 150°C and meets AEC-Q101 qualification standards.
Verify the specific suffix H6433XTMA1 against official Infineon documentation to confirm the exact reel orientation and packaging specifications for the SOT-363 variant. Ensure that the procurement channel provides valid traceability data consistent with automotive-grade components. Confirm RoHS compliance status through the manufacturer's material content sheets prior to integration into final assemblies.
Select this component when dual isolated NPN switching functionality is required in a compact footprint. The integrated 10 kΩ bias resistors reduce external component count compared to discrete transistor solutions. Consider the 250 mW power dissipation limit and thermal resistance values when designing for high ambient temperatures or dense PCB layouts requiring efficient heat management.
This part belongs to the BCR133 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR133 (SOT-23) and BCR133W (SOT-323), offering different pin configurations and package sizes. The SH6433XTMA1 designation specifically identifies the SOT-363 package version containing two matched transistors.
Direct replacements must match the SOT-363 package, NPN polarity, 50V VCEO rating, and integrated 10kΩ/10kΩ resistor configuration. Verify pinout compatibility between Pin 1 (Emitter 1) and Pin 3 (Collector 2) mappings. Check if alternative suppliers offer equivalent AEC-Q101 qualified dual digital transistors with similar hFE and saturation voltage characteristics.