BCR135SE6327BTSA1

BCR135SE6327BTSA1

  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-

SKU:c6e7088e2f8f Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:150MHz
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO

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BCR135SE6327BTSA1

Overview

The BCR135SE6327BTSA1 is an NPN silicon digital transistor from the BCR135 series, housed in a SOT-363 package. It integrates two internally isolated transistors with good matching within a single multichip package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The device features built-in bias resistors with R1 typically at 10 kΩ and R2 at 47 kΩ, resulting in a resistor ratio (R1/R2) of approximately 0.21. It has a DC current gain (hFE) minimum of 70 and a transition frequency (fT) typical value of 150 MHz.

Feature Summary

  • Integrates two internally isolated NPN transistors with matched characteristics in one compact multichip package.
  • Includes built-in bias resistors (R1=10 kΩ, R2=47 kΩ) to simplify switching circuit design.
  • Qualified according to AEC-Q101 standards for automotive applications.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface driver circuits

Procurement Notes

Verify component authenticity by checking the datasheet specifications against the physical marking on the SOT-363 package. Confirm that the ordering suffix matches the required package type and tape/reel configuration. Ensure compliance with RoHS requirements if applicable to the assembly process. Cross-reference the part number with official Infineon documentation to confirm availability and lifecycle status before procurement.

Selection Notes

Select this component when a dual-channel solution with internal isolation is required in a small footprint. The SOT-363 package provides space efficiency compared to discrete dual-transistor setups. Consider the 50 V rating and 100 mA current capability for low-power switching tasks. Verify thermal resistance values if operating near maximum power dissipation limits.

Part Context

This part belongs to the BCR135 series of NPN silicon digital transistors. The series includes variants like BCR135 (SOT-23), BCR135W (SOT-323), and BCR135S (SOT-363). The 'S' designation specifically indicates the SOT-363 package containing two isolated transistors. The 'E6327B' suffix denotes specific packaging and handling details defined by Infineon.

Replacement Considerations

Direct substitutes must match the SOT-363 package, NPN polarity, and dual-isolated transistor configuration. Check for equivalent VCEO, IC, and Ptot ratings. Verify that the replacement offers similar built-in resistor values or can be adapted with external components. Ensure the alternative is also AEC-Q101 qualified if used in automotive contexts.

BCR135SE6327BTSA1BCR135SE6327BTSA1

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