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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.25W SOT363
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：100MHz
- Power - Max：250mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
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Overview
The BCR148SH6327XTSA1 is an NPN silicon digital transistor from Infineon Technologies, housed in a SOT-363 (SC-88) surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single multichip module. The device features built-in bias resistors of 47 kΩ each (R1 and R2). Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a maximum DC collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The transition frequency (fT) is specified at 100 MHz, and the component is qualified according to AEC-Q101 standards.
Feature Summary
- Integrates two internally isolated NPN transistors with good matching characteristics within a compact multichip package.
- Includes built-in bias resistors (R1=47 kΩ, R2=47 kΩ) for simplified circuit design.
- Qualified according to AEC-Q101 automotive standards for reliability.
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and reel orientation specifications. Ensure that the SOT-363 package dimensions and pin configuration align with the target PCB footprint requirements before finalizing procurement decisions.
Selection Notes
Select this component when dual isolated NPN switching functionality is required in a minimal footprint. The integrated 47 kΩ bias resistors reduce external component count. Verify thermal management capabilities, as the total power dissipation is limited to 250 mW, requiring adequate heat sinking or PCB copper area for high-duty cycle operations.
Part Context
This part belongs to the BCR148 series of NPN silicon digital transistors. The 'S' designation indicates the SOT-363 package containing two isolated transistors, distinguishing it from the single-transistor BCR148 (SOT-23) and BCR148W (SOT-323) variants. All variants share similar electrical characteristics but differ in package type and internal transistor count.
Replacement Considerations
Direct substitutes within the same family include BCR148 (SOT-23) and BCR148W (SOT-323), though these contain only one transistor instead of two. Cross-package replacements require careful verification of pinout compatibility and thermal resistance differences between SOT-23, SOT-323, and SOT-363 packages.
FAQ
What is the typical value of the built-in bias resistors?
The typical value for both the input resistor (R1) and the base pull-down resistor (R2) is 47 kΩ.
How many transistors are contained in the BCR148S package?
The BCR148S variant contains two internally isolated NPN transistors with good matching characteristics.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 50 V.
