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The BCR148SH6433XTMA1 is an NPN Silicon Digital Transistor from the Infineon BCR148 series, housed in a SOT-363 package. It integrates two internally isolated transistors with matched characteristics within a single multichip module. The device features built-in bias resistors of R1=47 kΩ and R2=47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The transition frequency (fT) is 100 MHz, and it meets AEC-Q101 qualification standards.
Verify component authenticity by checking the marking layout against official datasheet specifications. Confirm the package type matches the required PCB footprint. Ensure compliance with RoHS directives as the package is Pb-free. Cross-reference the ordering suffix with manufacturer documentation to confirm specific tape-and-reel configurations.
Select this component when dual isolated NPN digital transistor functionality is required in a compact form factor. The SOT-363 package provides space efficiency compared to discrete solutions. Consider the 47 kΩ internal resistor values for base drive requirements. Verify thermal performance limits based on the specific application's case temperature constraints.
This part belongs to the BCR148 series of NPN Silicon Digital Transistors. The 'S' designation indicates the dual-transistor configuration in the SOT-363 package. Other variants in the series include BCR148 (SOT-23) and BCR148W (SOT-323). The series is designed for applications requiring integrated biasing and high switching speeds.
BCR148S
The typical resistor ratio (R1/R2) is 1, with R1 and R2 both being 47 kΩ.
The maximum total power dissipation is 250 mW when the case temperature (TS) is less than or equal to 115°C.
Yes, the component is qualified according to the AEC-Q101 standard.