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The BCR169SE6327BTSA1 is a PNP silicon digital transistor from the Infineon BCR169 series, housed in an SOT-363 package. It integrates two internally isolated transistors with good matching characteristics within a single multichip configuration. The device features a built-in bias resistor (R1) of 4.7 kΩ and is qualified according to AEC-Q101 standards for automotive applications. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The transition frequency (fT) reaches 200 MHz.
Verify the specific ordering suffix against official documentation to confirm the exact package variant and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification level if used in automotive systems. Ensure thermal management aligns with the specified junction-to-soldering point resistance values for the SOT-363 package.
Select this component when a dual-channel PNP digital solution with internal biasing is required in a small footprint. The SOT-363 package offers space efficiency compared to discrete dual-transistor setups. Consider the 4.7 kΩ internal resistor value for base drive requirements and verify that the 50 V voltage rating suits the application's maximum operating conditions.
This part belongs to the BCR169 series of PNP silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR169 (SOT-23), BCR169S (SOT-363), and BCR169W (SOT-323). The BCR169SE6327BTSA1 specifically denotes the SOT-363 package version with automotive qualification and standard reel packaging.
Direct substitutes must match the PNP polarity, SOT-363 package, and integrated dual-transistor architecture with a ~4.7 kΩ bias resistor. Verify equivalent VCEO, IC, and fT ratings. Cross-reference with other manufacturers' dual PNP digital transistors only if pinout compatibility and electrical characteristics are identical.