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The BCR169SH6327XTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in a SOT-363 (SC-88) surface-mount package. It integrates two internally isolated transistors with good matching within a single multichip structure. The device features a built-in bias resistor of 4.7 kΩ and supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Total power dissipation reaches 250 mW at case temperatures up to 115°C. It operates within a junction temperature range of -65°C to 150°C and meets AEC-Q101 qualification standards for automotive applications.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and RoHS compliance status. Ensure that the SOT-363 footprint matches the target PCB layout requirements before finalizing component selection.
Select this component when dual isolated PNP switching functionality is required in a minimal footprint. The integrated bias resistor reduces external component count. Verify thermal constraints as total power dissipation depends on case temperature limits defined in the datasheet.
This part belongs to the BCR169 series of PNP digital transistors. Variants include BCR169 in SOT-23 and BCR169W in SOT-323 packages. The SH6327XTSA1 suffix indicates the specific tape-and-reel packaging configuration for the SOT-363 version.
Check for other BCR169 variants or similar PNP digital transistors with comparable VCEO and IC ratings if sourcing issues arise. Ensure replacement parts maintain the same isolation and bias resistor specifications.