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The BCR183SE6433BTMA1 is a PNP silicon digital transistor from the Infineon BCR183 series, housed in an SOT-23 package. It integrates two internally isolated transistors with matched characteristics within a single multichip assembly. The device features built-in bias resistors of 10 kΩ each (R1 and R2), resulting in a nominal resistor ratio of 1:1. Key electrical parameters include a collector-emitter breakdown voltage of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at a case temperature up to 115°C. The component operates within a junction temperature range of -65°C to 150°C and meets AEC-Q101 qualification standards.
Verify the specific ordering suffix against official Infineon documentation to confirm the exact package type and marking configuration. Confirm RoHS compliance status and check for any product discontinuation notifications or end-of-life notices prior to finalizing procurement plans.
Select this component when a compact solution requiring two matched PNP switching elements is necessary. Ensure the application voltage does not exceed the 50 V collector-emitter rating and that thermal management accommodates the 250 mW power dissipation limit. Verify that the SOT-23 footprint aligns with the PCB layout requirements.
This part belongs to the BCR183 series of PNP digital transistors offered by Infineon Technologies. The series includes variants such as BCR183S, BCR183U, and BCR183W, which differ primarily in their physical packaging configurations like SC74, SOT363, and SOT323 while maintaining similar internal electrical characteristics.
Consult the official datasheet for alternative part numbers within the BCR183 family that utilize different packages, such as BCR183S, BCR183U, or BCR183W, if pin compatibility or board space constraints require a change in form factor.