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The BCR183UE6327HTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in an SC-74 (SC-70-6) surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single multichip unit. The device features built-in bias resistors of 10 kΩ each (R1 and R2), resulting in a typical resistor ratio of 1. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at case temperatures up to 118°C. It operates within a junction temperature range of -65°C to +150°C and meets AEC-Q101 qualification standards.
Verify the specific ordering suffix against official documentation to confirm the exact package type and reel configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or Infineon sales offices prior to procurement.
Select this component when a dual-channel PNP digital solution with integrated biasing is required in a small footprint. Ensure the SC-74 package dimensions fit the PCB layout constraints. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the application.
This part belongs to the BCR183 series of PNP silicon digital transistors. Other variants in the series include BCR183 (SOT-23), BCR183S (SOT-363), and BCR183W (SOT-323). All share similar electrical characteristics but differ in physical packaging and pin configurations.
Direct replacements must match the SC-74 package and internal resistor values. Cross-reference with other manufacturers' dual PNP digital transistors in SC-74 packages, ensuring identical pinout and electrical ratings.