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The BCR198SE6327BTSA1 is a PNP silicon digital transistor from the Infineon BCR198 series, housed in an SOT-363 package. It integrates two internally isolated transistors with matched characteristics within a single multichip module. The device features built-in bias resistors of 47 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a maximum collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The transition frequency (fT) is typically 190 MHz.
Verify the specific ordering suffix E6327BTSA1 against official Infineon documentation to confirm tape-and-reel packaging details and RoHS compliance status. Ensure that the component meets all required environmental and automotive qualification standards for the intended application before finalizing procurement.
Select this component when a dual-channel PNP digital transistor solution is required in a compact SOT-363 footprint. The integrated bias resistors simplify circuit design by reducing external component count. Verify that the 50 V voltage rating and 100 mA current capacity align with the system's operational requirements.
This part belongs to the BCR198 series of PNP Silicon Digital Transistors. Other variants in this family include the BCR198 in an SOT-23 package and the BCR198W in an SOT-323 package. All variants share similar electrical characteristics but differ in physical package dimensions and thermal resistance properties.
Direct replacements within the same series include BCR198S in alternative packages such as SOT-23 or SOT-323. Cross-brand equivalents must be evaluated based on pin configuration, voltage ratings, and internal resistor values.