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The BCR198SH6327XTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in a SOT-363 (SC-88) surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single multichip module. The device features built-in bias resistors of 47 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The transition frequency (fT) is typically 190 MHz.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure that the SOT-363 footprint matches the target PCB layout. Confirm availability through authorized distributors as component lifecycles may change.
Select this component when dual isolated PNP switching is required in a minimal footprint. The integrated 47 kΩ bias resistors reduce external component count compared to discrete transistor pairs. Verify thermal constraints, as total power dissipation is limited to 250 mW. Ensure the 50 V voltage rating meets the system's maximum operating requirements.
This part belongs to the BCR198 series of PNP silicon digital transistors. The 'S' designation indicates the SOT-363 package containing two isolated devices. Other variants in the series include BCR198 (SOT-23) and BCR198W (SOT-323), which differ in pin configuration and thermal characteristics but share similar electrical performance profiles.
Direct substitutes include other BCR198 series parts like BCR198S or BCR198W if package compatibility allows. Cross-reference with equivalent dual PNP digital transistors from other manufacturers, ensuring matching VCEO, IC, and resistor values.