BCR198SH6327XTSA1

BCR198SH6327XTSA1

  • Description:TRANS 2PNP PREBIAS 0.25W SOT363
  • Series:-

SKU:73ff7e69b379 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:190MHz
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO

Download product information

BCR198SH6327XTSA1

Overview

The BCR198SH6327XTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in a SOT-363 (SC-88) surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single multichip module. The device features built-in bias resistors of 47 kΩ each (R1 and R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 115°C. The transition frequency (fT) is typically 190 MHz.

Feature Summary

  • Integrates two internally isolated PNP transistors with good matching in one compact multichip package
  • Includes built-in bias resistors (R1 = 47 kΩ, R2 = 47 kΩ) for simplified circuit design
  • Qualified according to AEC-Q101 standards for automotive applications
  • Provides high DC current gain and low saturation voltage for efficient switching

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure that the SOT-363 footprint matches the target PCB layout. Confirm availability through authorized distributors as component lifecycles may change.

Selection Notes

Select this component when dual isolated PNP switching is required in a minimal footprint. The integrated 47 kΩ bias resistors reduce external component count compared to discrete transistor pairs. Verify thermal constraints, as total power dissipation is limited to 250 mW. Ensure the 50 V voltage rating meets the system's maximum operating requirements.

Part Context

This part belongs to the BCR198 series of PNP silicon digital transistors. The 'S' designation indicates the SOT-363 package containing two isolated devices. Other variants in the series include BCR198 (SOT-23) and BCR198W (SOT-323), which differ in pin configuration and thermal characteristics but share similar electrical performance profiles.

Replacement Considerations

Direct substitutes include other BCR198 series parts like BCR198S or BCR198W if package compatibility allows. Cross-reference with equivalent dual PNP digital transistors from other manufacturers, ensuring matching VCEO, IC, and resistor values.

BCR198SH6327XTSA1BCR198SH6327XTSA1

Click on the inquiry