BCR198SH6827XTSA1

BCR198SH6827XTSA1

  • Description:TRANS 2PNP PREBIAS 0.25W SOT363
  • Series:-

SKU:d4bf8ed4d2c6 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.25W SOT363
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:190MHz
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO

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BCR198SH6827XTSA1

Overview

The BCR198SH6827XTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in a SOT-363 (SC-88) surface-mount package. It integrates two internally isolated transistors with matched characteristics within a single multichip assembly. The device features built-in bias resistors of 47 kΩ each (R1 and R2), resulting in a typical resistor ratio of 1. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at case temperatures up to 115°C. The transition frequency (fT) is typically 190 MHz.

Feature Summary

  • Integrates two internally isolated PNP transistors with good matching in one compact multichip package
  • Includes built-in bias resistors (R1 = 47 kΩ, R2 = 47 kΩ) for simplified circuit design
  • Qualified according to AEC-Q101 standards for automotive applications
  • Provides high switching speed with a typical transition frequency of 190 MHz

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix H6827XTSA1 against official Infineon documentation to confirm packaging details and reel specifications. Ensure compliance with RoHS requirements and Pb-free status as stated in the datasheet. Confirm that the SOT-363 package orientation matches system layout requirements, noting that symmetric types may lack defined pin 1 orientation in the reel.

Selection Notes

Select this component when dual isolated PNP switching functionality is required in a minimal footprint. The integrated 47 kΩ bias resistors reduce external component count compared to discrete solutions. Consider the 250 mW power dissipation limit and thermal resistance values when designing for high ambient temperatures or dense PCB layouts.

Part Context

This part belongs to the BCR198 series of PNP silicon digital transistors. The series includes variants such as BCR198 (SOT-23) and BCR198W (SOT-323). The 'S' designation indicates the SOT-363 package containing two isolated transistors. All variants share similar electrical characteristics but differ in package dimensions and thermal properties.

Replacement Considerations

Direct substitutes within the same series include BCR198SH6327XTSA1 (different tape/reel packaging) and BCR198W (SOT-323 package). Cross-package replacements like BC857SH6327XTSA1 offer dual PNP configurations but require verification of pinout compatibility and electrical parameter alignment.

FAQ

What is the configuration of the transistors inside the BCR198SH6827XTSA1?

The device contains two internally isolated PNP transistors with good matching characteristics within a single SOT-363 package.

What are the values of the built-in bias resistors?

The device has two built-in bias resistors, R1 and R2, both with a typical value of 47 kΩ.

Is this component qualified for automotive applications?

Yes, the BCR198 series is qualified according to the AEC-Q101 standard.

BCR198SH6827XTSA1BCR198SH6827XTSA1

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